| PART |
Description |
Maker |
| HL7851G |
From old datasheet system
GaAlAs Laser Diode
|
HITACHI[Hitachi Semiconductor]
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LNC704PS |
GaAlAs Semiconductor Laser
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
| NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| TSAL7300 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in ? 5 mm (T?1 3/4)Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
